Speaker: Dr. Zhang Guoqiang, NTT Basic Research Laboratories, Atsugi, Japan

Time: Tuesday, 23 May 2017, 13:00 h

Venue: Seminar room S 101, Walter-Schottky-Institute (WSI), Am Coulombwall 4, 85748 Garching

Abstract (Download):

Monolithic integration of III-V compound semiconductor lasers in the telecom band on Si still remains challenging. Nanowire structure provides an alternative solution because of its high ability of lattice relaxation. We have developed gold-free CMOS-compatible growth process for InP/InAs quantum nanostructure nanowires with high controllability (structure and doping) and superior optical property. The nanowire exhibits lasing behavior in the telecom band at room temperature.