17.05.2019
Transition metal oxides and resistive RAM memory
Prof. Dr. Warren Jackson, Palo Alto Research Center PARC, Electronic Materials Development Lab, Palo Alto, USA
Sprecher: Prof. Dr. 
Warren Jackson, Palo Alto Research Center PARC, Electronic Materials Development Lab, Palo Alto, USA
Termin: Fraitag, 17. Mai 2019, 10:30 Uhr
Veranstaltungsort: Seminarraum S 101, Walter-Schottky-Institut (WSI), Am Coulombwall 4, 85748 Garching
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Abstract